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  • IRF6665

IRF6665

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    • 产品描述：

    Features
    • Latest MOSFET Silicon technology
    • Key parameters optimized for Class-D audio amplifier applications
    • Low RDS(on) for improved efficiency
    • Low Qg for better THD and improved efficiency
    • Low Qrr for better THD and lower EMI
    • Low package stray inductance for reduced ringing and lower EMI
    • Can deliver up to 100W per channel into 8Ω with no heatsink
    • Dual sided cooling compatible
    • Compatible with existing surface mount technologies
    • Lead and Bromide Free

    产品概述

    Features 

    • Latest MOSFET Silicon technology 

    • Key parameters optimized for Class-D audio amplifier applications

    • Low RDS(on) for improved efficiency 

    • Low Qg for better THD and improved efficiency

    • Low Qrr for better THD and lower EMI

    • Low package stray inductance for reduced ringing and lower EMI

    • Can deliver up to 100W per channel into 8Ω with no heatsink 

    • Dual sided cooling compatible 

    • Compatible with existing surface mount technologies

    • Lead and Bromide Free