The TTA1943 from Toshiba is a through hole PNP silicon epitaxial transistor in TO-3 package. This device is commonly used for power amplification.
The TTA1943 from Toshiba is a through hole PNP silicon epitaxial transistor in TO-3 package. This device is commonly used for power amplification.
• Collector to emitter voltage (Vce) is -230V
• Collector current (Ic) is -15A
• Power dissipation (Pd) is 150W
• Collector to emitter saturation voltage of -3V at -8A collector current
• DC current gain (hFE) of 80 at -1A collector current
• Operating junction temperature range from 150°C
