The TTC5200 from Toshiba is a through hole NPN silicon transistor in TO-3P package with high collector voltage. This device is commonly used for power amplification.
The TTC5200 from Toshiba is a through hole NPN silicon transistor in TO-3P package with high collector voltage. This device is commonly used for power amplification.
• Collector to emitter voltage (Vce) is 230V
• Collector to base voltage of 230V
• Collector current (Ic) is 15A
• Power dissipation (pd) is 150W
• Junction temperature of 150°C
• Current gain of 35 at 7A collector current
• Collector to emitter saturation voltage of 3V
• Collector to emitter breakdown voltage of 230V
